document number: 93489 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 21-may-08 1 standard recovery diodes (stud version), 150 a 45l(r), 150k(r), 150ks(r) series vishay high power products features ? alloy diode ? high current carrying capability ? high surge current capabilities ? stud cathode and stud anode version ? rohs compliant ? designed and qualified for industrial level typical applications ? battery chargers ?welders ? machine tool controls ? high power drives ? medium traction applications ? freewheeling diodes electrical specifications product summary i f(av) 150 a do-205aa (do-8) rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 150 a t c 150 c i f(rms) 235 a i fsm 50 hz 3570 a 60 hz 3740 i 2 t 50 hz 64 ka 2 s 60 hz 58 v rrm range 100 to 600 v t j - 40 to 200 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = 175 c ma 45l(r) 150k(r) 150ks(r) 10 100 200 35 20 200 300 30 300 400 40 400 500 60 600 720
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93489 2 revision: 21-may-08 45l(r), 150k(r), 150ks(r) series vishay high power products standard recovery diodes (stud version), 150 a forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 150 a 150 c maximum rms forward current i f(rms) dc at 142 c case temperature 235 a maximum peak, one cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 3570 t = 8.3 ms 3740 t = 10 ms 100 % v rrm reapplied 3000 t = 8.3 ms 3140 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 64 ka 2 s t = 8.3 ms 58 t = 10 ms 100 % v rrm reapplied 45 t = 8.3 ms 41 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 640 ka 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.67 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 0.83 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 1.42 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 0.91 maximum forward voltage drop v fm i pk = 471 a, t j = 25 c, t p = 10 ms sinusoidal wave 1.33 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range t j , t stg - 40 to 200 c maximum thermal resistance, junction to case r thjc dc operation 0.25 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.10 mounting torque 45l minimum not lubricated threads 14.1 (125) n m (lbf in) maximum 17.0 (150) minimum lubricated threads 12.2 (108) maximum 15.0 (132) mounting torque 150k 150ks minimum not lubricated threads 11.3 (100) n m (lbf in) maximum 14.1 (125) minimum lubricated threads 9.5 (85) maximum 12.5 (110) approximate weight 100 g 3.5 oz. case style 45l see dimensions - link at the end of datasheet do-205ac (do-30) 150k-a do-205aa (do-8) 150ks b-42
document number: 93489 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 21-may-08 3 45l(r), 150k(r), 150ks(r) series standard recovery diodes (stud version), 150 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - forward powe r loss characteristics r thjc conduction conduction angle sinusoidal conduction rect angular conduction test conditions units 180 0.031 0.023 t j = t j maximum k/w 120 0.038 0.040 90 0.048 0.053 60 0.071 0.075 30 0.120 0.121 140 150 160 170 180 190 200 0 20406080100120140160 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) 45l...,150... se ries r (dc) = 0.25 k/ w thjc 140 150 160 170 180 190 200 0 50 100 150 200 250 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) 45l..., 150... se ries r (dc) = 0.25 k/ w thjc 25 50 75 100 125 150 175 200 maximum allowable ambient temperature (c) r = 0 . 1 k / w - d e l t a r 0 . 2 k / w 0.6 k / w 0 . 8 k / w 1 . 5 k / w 2 k / w 3 k / w 1 k / w 0 . 4 k / w 0 . 3 k / w t h sa 160 0 20 40 60 80 100 120 140 160 180 0 40 80 120 rm s lim i t 180 120 90 60 30 conduction angle maximum average forward power loss (w) average forward current (a) 45l..., 150... series t = 200c j
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93489 4 revision: 21-may-08 45l(r), 150k(r), 150ks(r) series vishay high power products standard recovery diodes (stud version), 150 a fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - forward voltage drop characteristics 25 50 75 100 125 150 175 200 maximum allowable ambient temperature (c) r = 0 . 1 k / w - d el t a r 0 . 3 k / w t h s a 3 k / w 2 k / w 1 . 5 k / w 1 k / w 0 . 8 k / w 0 . 6 k / w 0 . 4 k / w 0 . 2 k / w 250 0 50 100 150 200 250 050100150200 dc 180 120 90 60 30 rm s li m i t conduc tion period average forward current (a) maximum average forward power loss (w) 45l..., 150... series t = 200c j 500 1000 1500 2000 2500 3000 3500 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave forward current (a) initia l t = 200c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any ra te d lo a d c o nd it io n and with ra ted v app lied following surg e. rrm 45l..., 150... series 500 1000 1500 2000 2500 3000 3500 4000 0.01 0.1 1 pu lse tra in du r a t io n ( s) pe a k ha lf s ine wave forward current (a) initia l t = 200c no voltage reapplied rated v reapplied versus pulse train dura tion. rrm j maximum non repetitive surge current 45l..., 150... series 10 100 1000 10000 00.511.522.533.544.5 t = 2 5 c j instantaneous forward current (a) instantaneous forward voltage (v) t = 200c j 45l...,150... se rie s
document number: 93489 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 21-may-08 5 45l(r), 150k(r), 150ks(r) series standard recovery diodes (stud version), 150 a vishay high power products fig. 8 - thermal impedance z thjc characteristics ordering information tables 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) steady state value r = 0.25 k7w (dc operation) 45l..., 150... series thjc device code 2 5 1 3 4 15 0 k r 60 a 6 1 - 15 = essential part number 2 - 0 = standard device 3 - case style: k = do-205aa (do-8) ks = b-42 4 - r = stud reverse polarity (anode to stud) none = stud normal polarity (cathode to stud) 5 - voltage code x 10 = v rrm (see voltage ratings table) 6 - a = essential part number for 150k (omitted for 150ks) note: for metric device m12 x 1.75 contact factory device code 2 1 3 4 45 l r 60 1 - 45 = standard version 2 - l = essential part number 3 - r = stud reverse polarity (anode to stud) none = stud normal polarity (cathode to stud) 4 - voltage code x 10 = v rrm (see voltage ratings table) links to related documents dimensions http://www.vishay.com/doc?95314
document number: 95314 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 22-jul-08 1 do-205ac (do-30), do-205aa (do-8) and b-42 for 45l(r), 150k (r) and 150ks(r) series outline dimensions vishay semiconductors dimensions for 45l(r) series - do-205ac (do-30) in millimeters (inches) 15.30 (0.60) max. 8.30 (0.327) 7.55 (0.297) ? 7.39 (0.297) ? 6.89 (0.271) 10.41 (0.410) 8.90 (0.350) ? 23.30 (0.92) max. 17 (0.69) max. 1/2"-20unf-2a 27.00 (1.06) max. across flats 7.88 (0.310) 7.36 (0.290) 137.67 (5.42) 132.58 (5.22) 23.30 (0.917) max.
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95314 2 revision: 22-jul-08 outline dimensions vishay semiconductors do-205ac (do-30), do-205aa (do-8) and b-42 for 45l(r), 150k(r) and 150ks(r) series dimensions for 150k(r) series - do-205aa (do-8) in millimeters (inches) note (1) for metric devi ce m12 x 1.75 contact factory 15.30 (0.60) max. ? 7.39 (0.297) ? 6.89 (0.271) 10.41 (0.410) 8.90 (0.350) ? 23.30 (0.92) max. 3/8"-24unf-2a (1) 27.00 (1.06) max. across flats 7.88 (0.310) 7.36 (0.290) 117.47 (4.625) 111.13 (4.375) 23.30 (0.917) max. 17 (0.69) max.
document number: 95314 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 22-jul-08 3 outline dimensions do-205ac (do-30), do-205aa (do-8) and b-42 for 45l(r), 150k( r) and 150ks(r) series vishay semiconductors dimensions for 150ks(r) series - b-42 in millimeters (inches) 2.03 (0.080) 1.27 (0.050) 4.08 (0.161) 3.70 (0.146) 9.50 (0.374) 7.50 (0.295) 18.00 (0.708) 14.00 (0.551) 6.76 (0.266) 6.25 (0.246) 3/8"-24unf-2a 12.50 (0.492) 11.70 (0.460) ? 4.34 (0.171) ? 4.09 (0.161) 10.2 (0.401) 9.2 (0.362) 21.47 (0.843) 21.20 (0.835) 37.13 (1.462) 33.83 (1.332) 27.17 (1.070) 26.22 (1.032)
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